PHOTOELECTRIC PROPERTIES OF SEMICONDUCTOR STRUCTURE OF POROUS SILICON FORMED BY METALSTIMULATED ETCHING (65-68)

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Дата публикации статьи в журнале: 2019/11/13
Название журнала: Восточно Европейский Научный Журнал, Выпуск: 50, Том: 4, Страницы в выпуске: 65-68
Автор: Ivanov A.I.
, Ryazan State University named for S.A. Yesenin ,
Анотация: The photoelectric properties of a semiconductor structure sample with an antireflective porous silicon film obtained by the method of metal-stimulated etching are studied. The photocurrent spectra of samples obtained by the method of metal-stimulated etching and electrochemical anodic etching were compared. In the studied structure, with an increase in the applied voltage, a monotonic increase in photocurrents is observed. The photoelectric properties of the resulting structure are influenced by the processes of recharging traps. The studied sample can be used to create highly sensitive photodiodes and in solar energy.
Ключевые слова: porous silicon   antireflection film   the photocurrent spectra   traps   nanowires  
Данные для цитирования: Ivanov A.I. , . PHOTOELECTRIC PROPERTIES OF SEMICONDUCTOR STRUCTURE OF POROUS SILICON FORMED BY METALSTIMULATED ETCHING (65-68). Восточно Европейский Научный Журнал. Физико-математические науки. 2019/11/13; 50(4):65-68.

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